3D00100 - SEMI 3D1 - スルーシリコンビア（TSV）の幾何学的計測のための用語 Revision:SEMI 3D1-0912 - Superseded and analytical procedures for hydrogen

and analytical procedures for hydrogen (H2)

OC（オリエンテーションコーナ）により識別していた情報に加え，基板ごとのID等の情報を加えることができる。

and wafer preparation characteristics for glass starting material that will be used as carrier wafers in a temporary bonded state

This method can be used to characterize welded connections on the basis of test data developed under the conditions described herein

SEMI C88-0815 (first published)

3D00100 - SEMI 3D1 - スルーシリコンビア（TSV）の幾何学的計測のための用語 Revision:SEMI 3D1-0912 - Superseded and analytical procedures for hydrogenNOTICE: This translation is a REFERENCE COPY ONLY. If differences should exist between the English version and a translation in any other language, the English version is the official and authoritative version. SEMI SEMI 3DS IC Global Technical Committee2012830global Audits and Reviews Subcommittee20129www. semiviews. org www. semi. org TSV TSV TSV TSV SEMI E89 SEMISEMI P35