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G06600 - SEMI G66 - 半導体用プラスチックモールディングコンパウンドの吸湿特性の測定方法 StdPbc-0214 SEMI D65-1011 (first published)

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Description

SEMI D65-1011 (first published)

SEMI C30-0699 (first published - replaces SEMI C1

1-0708 (technical revision)

1  The specification for epitaxial silicon wafers for discrete semiconductor device manufacture is specifically directed to silicon homoepitaxial deposits thicker than 25 µm on homogeneous silicon substrates or similar epitaxial wafers that are to be used to make discrete devices

orgで入手可能となる。初版は2003年11月発行。前版は2009年7月発行。

G06600 - SEMI G66 - 半導体用プラスチックモールディングコンパウンドの吸湿特性の測定方法 StdPbc-0214 SEMI D65-1011 (first published)global Assembly & Packaging Technical Committee201171global Audits and Reviews Subcommittee20118www. semiviews. org www. semi. org1996200411 : Referenced SEMI Standards None.

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