MF053300 - SEMI MF533 - Test Method for Thickness and Thickness Variation of Silicon Wafers Revision:SEMI MF533-0310 - Superseded The uniformity across a wafer

The uniformity across a wafer of the sheet resistance resulting from any of these processes is important for the equivalence of performance of devices or circuits made from various regions of the wafer

この文書は，触針式，光学触針式測定器および光学干渉計式平面度測定器を使用した，FPDガラス基板の表面うねりの測定方法について規定する。

This Test Method is used to evaluate the silver plaiting quality on leadframe for process control and outgoing inspection at the supplier or by the user for incoming inspection for process control and outgoing inspection at the supplier or by the user for incoming inspection

This Specification covers dimensional

本スタンダードは，FPD偏光板および関連材料の防汚性と耐薬品性の評価方法を規定し，エンドユーザーおよび偏光板に関わる製造工程で想定される性能を評価する。

MF053300 - SEMI MF533 - Test Method for Thickness and Thickness Variation of Silicon Wafers Revision:SEMI MF533-0310 - Superseded The uniformity across a waferThis Test Method covers measurement of the thickness of silicon wafers, polished or unpolished, and estimation of the variation in thickness across the wafer for both flatted and notched wafers. For flatted wafers of 200 mm diameter or less, a five point pattern offset from the bisector of the primary flat is used. For notched wafers of 200 mm diameter or more, either a symmetrical five point or nine point pattern is used. This Test Method is intended