MF118800 - SEMI MF1188 - Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline StdPbc-1113 Net carrier density present near

Net carrier density present near the silicon-oxide interface may constitute an important acceptance requirement

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a procedure is described for qualifying certain moisture analyzers considered suitable for use in qualifying moisture standards

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is outlined as part of the test method and alternative

MF118800 - SEMI MF1188 - Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption With Short Baseline StdPbc-1113 Net carrier density present nearThis Test Method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared absorption band at room temperature, using a short baseline drawn between 1040 cm1 and 1160 cm1 to reduce the uncertainties due to perturbations in the IR absorption at the end point regions of longer baselines that arise from effects other than absorption by interstitial oxygen. Use of the short baseline results in