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水素（H2）
SEMI MF28-0317E (Reapproved 0622)
previously published June 2000
The characteristics of encapsulation materials such as coefficient of thermal expansion (CTE) needs to be recognized and defined to enable the qualified encapsulation processes for large panel size
Based on data reported by Severin2 and Grove
M09100 - SEMI M91 - Test Method for Determination of Threading Screw Dislocation Density in 4H-SIC by X-Ray Topography StdPbc-0224 水素（H2）Threading screw dislocations (TSDs) are detrimental to several types of electronic devices manufactured from 4H SiC. Most TSDs are transferred from a substrate into an epitaxial layer and may cause pits in the epi layer, which can be problematic for certain processing steps. The density and distribution of TSDs is a critical parameter for evaluating the wafer quality and for failure analysis of errant device structures. X ray topography (XRT) is able
