G05000 - SEMI G50 - Specification for Co-Fired Ceramic Fine Pitch Leaded and Leadless Chip Carrier Package Constructions Revision:Default Title 4 These test methods were

4  These test methods were developed for use on single crystal specimens of silicon

It defines the view of the equipment through the SECS II link

certain individual impurity species sometimes can be identified under very restricted conditions

This Test Method is intended to be used with infrared spectrophotometers that are equipped to operate in the region from 2000 cm1 to 500 cm1 (5 µm to 20 µm)

SEMI M65 — Specifications for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers

G05000 - SEMI G50 - Specification for Co-Fired Ceramic Fine Pitch Leaded and Leadless Chip Carrier Package Constructions Revision:Default Title 4 These test methods wereThis specification defines the standard requirements for co fired ceramic fine pitch chip carrier constructions, including both top brazed leaded and top metallized leadless configurations. These constructions are for hermetic packaging of various devices, (e. g., high speed, digital VLSI silicon devices), and next level interconnection to printed wiring assemblies and modules by either lead solder attachment or by "leads last" techniques. Referenced