MF172700 - SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers Revision:SEMI MF1727-1110 (Reapproved 0322) - Current 2 The primary focus of

2  The primary focus of this Guide is on a semiconductor manufacturing environment

SFQR and SFQD are well known parameters and described in detailed in SEMI MF1530

and also through the balloting process

If wafer and stage cleanness is maintained

Wafer thickness and diameter for this Test Method is limited only by the range of microscope stage motions available

MF172700 - SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers Revision:SEMI MF1727-1110 (Reapproved 0322) - Current 2 The primary focus ofNOTICE: This Document was reapproved with minor editorial changes. Defects induced by thermal processing of silicon wafers may adversely influence device performance and yield. These defects are influenced directly by contamination, ambient atmosphere, temperature, time at temperature, and rate of change of temperature to which the specimens are subjected. Conditions vary significantly among device manufacturing technologies. The thermal cycling