M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry StdPbc-1012 SEMI F57-1000 (first published)

SEMI F57-1000 (first published)

·    Ion implant equipment

1-0708 (Reapproved 0413)

SEMI T9 — Specification for Marking of Metal Lead-Frame Strips with a Two-Dimensional Data Matrix Code Symbol

1-0414 — Specification for SOAP Binding for Equipment Self Description (EqSD)

M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry StdPbc-1012 SEMI F57-1000 (first published)Reduction of surface metal contamination below a concentration in accordance with the ITRS road map is a key issue for silicon wafer quality for most of the leading edge technology applications. This Document provides a guide for a high sensitivity measurement of trace metal contamination on the surface of a semiconductor grade silicon wafer by using inductively coupled plasma mass spectrometry (ICP MS). This Guide describes the procedure for trace