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M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded system crosstalk

SKU: 22112521929
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Description

system crosstalk

SEMI E134-0624 (technical revision)

Two methods for evaluating particle contribution are provided

this Specification allows suppliers of glass substrates for FPDs to simplify substrate information management by marking such information in one location around the OC on the substrate

in these test methods

M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded system crosstalkThis Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.

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