M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers StdPbc-0617 SEMI E90-1000 (technical revision)

SEMI E90-1000 (technical revision)

2 μm SOI layer thickness

20 minutes

静電気放電（ESD： electrostatic discharge）は製品とレチクルに損傷を与える。また，ESDイベントは電磁干渉（EMI： electromagnetic interference）を引き起こし，その結果，設備故障が発生する。

with respect to the timely collection and reporting of such data

M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers StdPbc-0617 SEMI E90-1000 (technical revision)This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density GaAs wafers.