M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M82-0712 - Superseded measured results for three different

measured results for three different edge profile types are given as examples in Related Information 1 at the end of this Standard

and strength of pellicle films used for masks

Process technology used in the manufacture of semiconductors and electronic devices continues to achieve increases in active feature density and device complexity

Qualitative Measures of Compliance

5  The more suitable measurement process consists of an alternative mounting for wafers with high aspect ratios and the use of high resolution measurements

M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M82-0712 - Superseded measured results for three differentThis Test Method covers the determination of the carbon content in GaAs using infrared (IR) absorption. The test method utilizes the linear relationship between the carbon content and the integrated absorption of the localized vibration of substitutionally bonded carbon (CAs). At a measurement temperature of 300 K (room temperature) this absorption band is observed at 580 cm1, at 77 K between 582 and 583 cm1. This Test Method covers the determination